Invention Grant
- Patent Title: Tall relaxed high percentage silicon germanium fins on insulator
- Patent Title (中): 绝缘体上高松弛高百分比的硅锗翅片
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Application No.: US14871008Application Date: 2015-09-30
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Publication No.: US09378952B1Publication Date: 2016-06-28
- Inventor: Veeraraghavan S. Basker , Oleg Gluschenkov , Shogo Mochizuki , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/311 ; H01L21/283
Abstract:
A method is provided for forming tall silicon germanium alloy fin structures on a surface of an insulator layer. The silicon germanium alloy fin structures have a high germanium content (i.e., 50 atomic percent or greater), a low defect density (i.e., 1E2 or less defects per square cm) and a high relaxation value (i.e., 80% or greater).
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