Methods for forming floating gate transistors provide for using a self-aligned plug formed over a floating gate electrode without use of an additional photolithography operation. The plug is centrally disposed and is formed and aligned using spacers. The spacers are formed alongside edges of a patterned sacrificial, oxidation resistant layer that includes an opening that defines the floating gate region. The plug may be formed of a silicon material and which becomes oxidized along with the floating gate such that the plug eventually forms part of the floating gate electrode or the plug may be formed of a nitride or other oxidation resistant material to retard or prevent oxidation in the central portion of the floating gate in which the plug is aligned.