Invention Grant
US09378962B2 Nonvolatile semiconductor storage device having a charge storage layer that includes metal grains
有权
具有包含金属颗粒的电荷存储层的非易失性半导体存储装置
- Patent Title: Nonvolatile semiconductor storage device having a charge storage layer that includes metal grains
- Patent Title (中): 具有包含金属颗粒的电荷存储层的非易失性半导体存储装置
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Application No.: US13601539Application Date: 2012-08-31
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Publication No.: US09378962B2Publication Date: 2016-06-28
- Inventor: Shigeki Hattori , Masakazu Yamagiwa , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
- Applicant: Shigeki Hattori , Masakazu Yamagiwa , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2012-062004 20120319
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L21/28 ; B82Y10/00 ; H01L29/423 ; H01L29/788 ; H01L27/115
Abstract:
A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.
Public/Granted literature
- US20130242670A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2013-09-19
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