A conductive interconnect including trenches (110) and (186) and vias (202) are formed in a workpiece (100) by applying a dielectric film stack (120) over the workpiece, and thereafter applying photoresist (140) over the film stack. Trenches (142) are patterned in the photoresist, wherein the trenches are in segments disposed end-to-end to each other. The segments are longitudinally spaced apart from each other at locations where the vias (202) are to be located. The trenches are etched into the dielectric film stack, and then filled with conductive material to form metal line segments (186). Vias (192) are patterned in the gaps separating the adjacent ends of the longitudinally-related lines (186). The patterned vias are etched and then filled with a conductive material, with the ends of the adjacent line segments (186) serving to accurately locate the vias, in a direction along the lengths of the trenches.