Invention Grant
- Patent Title: Wafer processing method
- Patent Title (中): 晶圆加工方法
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Application No.: US14257601Application Date: 2014-04-21
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Publication No.: US09379016B2Publication Date: 2016-06-28
- Inventor: Masaru Nakamura
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd
- Priority: JP2013-089579 20130422
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/683
Abstract:
A wafer processing method including a wafer supporting step of attaching a front side of a dicing tape formed of synthetic resin to a back side of a wafer and supporting a peripheral portion of the dicing tape to an annular frame, a dicing tape heating step of heating a back side of the dicing tape attached to the wafer to soften the dicing tape, thereby flattening the back side of the dicing tape, and a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer through the dicing tape from the back side thereof along the division lines in the condition where the focal point of the laser beam is set inside the wafer, thereby forming a modified layer inside the wafer along each division line.
Public/Granted literature
- US20140315372A1 WAFER PROCESSING METHOD Public/Granted day:2014-10-23
Information query
IPC分类:
