Invention Grant
- Patent Title: Metal contact for semiconductor device
- Patent Title (中): 半导体器件的金属接触
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Application No.: US14440876Application Date: 2013-10-30
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Publication No.: US09379077B2Publication Date: 2016-06-28
- Inventor: Chang-Ming Lin , Lei Shi , Honghui Wang
- Applicant: NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- Applicant Address: CN Nantong, Jiangsu
- Assignee: NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- Current Assignee: NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- Current Assignee Address: CN Nantong, Jiangsu
- Agency: RatnerPrestia
- Priority: CN201210444454 20121108; CN201210445562 20121108
- International Application: PCT/CN2013/086210 WO 20131030
- International Announcement: WO2014/071813 WO 20140515
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device package and packaging method, the semiconductor device packaging method comprising: providing a chip with a bonding pad formed on the chip surface; forming a passivation layer and a bump on the chip surface, wherein the passivation layer has an opening exposing part of the pad, the bump is located in the opening and the size of the bump is less than the size of the opening; forming a solder ball covering the top surface and the side wall of the bump, and the bottom surface of the opening. The formed semiconductor device package is not easy to form a short circuit. The bonding strength between the solder ball and the bump is high and the performance of the semiconductor device is stable.
Public/Granted literature
- US20150303159A1 SEMICONDUCTOR DEVICE PACKAGE AND PACKAGING METHOD Public/Granted day:2015-10-22
Information query
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