Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14483742Application Date: 2014-09-11
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Publication No.: US09379096B2Publication Date: 2016-06-28
- Inventor: Toshio Denta , Tomonori Seki , Tadanori Yamada , Tadahiko Sato
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2012-133982 20120613
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/498 ; H01L23/373 ; H01L23/495 ; H01L23/00 ; H01L25/16 ; H01L23/50 ; H01L23/24

Abstract:
A semiconductor device includes a plurality of semiconductor elements; first semiconductor chips including first semiconductor elements, the first semiconductor elements being defined as semiconductor elements in the plurality of semiconductor elements and having a current flowing greater than that of the other semiconductor elements; second semiconductor chips having second semiconductor elements, the second semiconductor elements being defined as semiconductor elements in the plurality of semiconductor elements for controlling the first semiconductor elements; an insulating substrate having a first wiring pattern bonded with the first semiconductor chips; and an insulating member having a second wiring pattern mounted with the second semiconductor chips.
Public/Granted literature
- US20140374889A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-12-25
Information query
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