An ESD protection circuit is cooperated with a high-frequency circuit and includes a silicon-controlled rectifier element and an inductive element. The silicon-controlled rectifier element is formed by the sequential connection of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material. The silicon-controlled rectifier element has a first end and a second end, and the first end is electrically coupled with the first P-type semiconductor material while the second end is electrically coupled with the second N-type semiconductor material. One end of the inductive element is electrically coupled with the first end and the other end thereof is electrically coupled with the first N-type semiconductor material, or one end of the inductive element is electrically coupled with the second end and the other end thereof is electrically coupled with the second P-type semiconductor material.