Invention Grant
US09379124B2 Vertical floating gate NAND with selectively deposited ALD metal films
有权
垂直浮栅NAND具有选择性沉积的ALD金属膜
- Patent Title: Vertical floating gate NAND with selectively deposited ALD metal films
- Patent Title (中): 垂直浮栅NAND具有选择性沉积的ALD金属膜
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Application No.: US14314370Application Date: 2014-06-25
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Publication No.: US09379124B2Publication Date: 2016-06-28
- Inventor: Rahul Sharangpani , Raghuveer S. Makala , Thomas Jongwan Kwon , Senaka Kanakamedala , George Matamis
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L27/115 ; H01L29/423 ; G11C16/04 ; G11C16/06 ; H01L29/788 ; H01L21/28 ; H01L21/285 ; H01L21/311 ; H01L21/3205 ; H01L21/02
Abstract:
A method of making a monolithic three dimensional NAND string which contains a semiconductor channel and a plurality of control gate electrodes, includes selectively forming a plurality of discrete charge storage regions using atomic layer deposition. The plurality of discrete charge storage regions includes at least one of a metal or an electrically conductive metal oxide.
Public/Granted literature
- US20150380422A1 Vertical Floating Gate NAND with Selectively Deposited ALD Metal Films Public/Granted day:2015-12-31
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