An active matrix substrate (1) includes a source electrode (32), a drain electrode (33), and a semiconductor layer (31) of oxide semiconductor. A gate insulating layer (42) of silicon oxide is formed on the gate electrode (12a); a source electrode (32), a drain electrode (33), and a semiconductor layer (31) are formed on the gate insulating layer (42); a first protection layer (44) of silicon nitride is formed on the gate insulating layer (42) without covering the semiconductor layer (31); and a second protection layer (46) of silicon oxide is formed on the semiconductor layer (31). The first protection layer (44) covers the signal line (14) and the source connection line (36).