Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14689906Application Date: 2015-04-17
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Publication No.: US09379155B2Publication Date: 2016-06-28
- Inventor: Yoshihiro Nabe , Hiroshi Asami , Yuji Takaoka , Yoshimichi Harada
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2007-066173 20070315
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L27/146 ; H01L23/48 ; H01L23/00 ; H01L21/768 ; H01L31/0224

Abstract:
A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.
Public/Granted literature
- US20150221690A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-08-06
Information query
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