Memory cells, non-volatile logic gates, and combinations thereof have magneto-tunneling junctions (MTJs) which are switched using potential differences across a piezoelectric layer in elastic contact with a magnetostrictive nanomagnet of an MTJ. One or more pairs of electrodes are arranged about the MTJ for supplying voltage across the piezoelectric layer for switching. A permanent magnetic field may be employed to change the positions of the stable magnetic orientations of the magnetostrictive nanomagnet. Exemplary memory cells and universal non-volatile logic gates show dramatically improved performance characteristics, particularly with respect to energy dissipation and error-resilience, over existing methods and architectures for switching MTJs such as spin transfer torque (STT) techniques.