Invention Grant
- Patent Title: Extended-drain transistor using inner spacer
- Patent Title (中): 扩展漏极晶体管采用内部间隔器
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Application No.: US14611134Application Date: 2015-01-30
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Publication No.: US09379212B1Publication Date: 2016-06-28
- Inventor: Qintao Zhang , Shom Surendran Ponoth , Akira Ito
- Applicant: BROADCOM CORPORATION
- Applicant Address: US CA Irvine
- Assignee: BROADCOM CORPORATION
- Current Assignee: BROADCOM CORPORATION
- Current Assignee Address: US CA Irvine
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L29/423 ; H01L23/66
Abstract:
An MOS device with increased drain-source voltage (Vds) includes a source region and a drain region deposited on a substrate. A gate region includes an inner spacer that extends the drain region. The inner spacer is formed attached to an isolation spacer that isolates the drain region from the gate region. The inner spacer is configured to extend the drain region to modify an electric field in a portion of a conductive band of the MOS device.
Public/Granted literature
- US20160190281A1 EXTENDED-DRAIN TRANSISTOR USING INNER SPACER Public/Granted day:2016-06-30
Information query
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