Invention Grant
US09379230B2 Semiconductor crystal substrate, manufacturing method of semiconductor crystal substrate, manufacturing method of semiconductor device, power unit, and amplifier
有权
半导体晶体基板，半导体晶体基板的制造方法，半导体装置的制造方法，功率单元和放大器
- Patent Title: Semiconductor crystal substrate, manufacturing method of semiconductor crystal substrate, manufacturing method of semiconductor device, power unit, and amplifier
- Patent Title (中): 半导体晶体基板，半导体晶体基板的制造方法，半导体装置的制造方法，功率单元和放大器
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Application No.: US13554117Application Date: 2012-07-20
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Publication No.: US09379230B2Publication Date: 2016-06-28
- Inventor: Shuichi Tomabechi
- Applicant: Shuichi Tomabechi
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2011-203793 20110916
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L21/02 ; H01L29/423
Abstract:
A semiconductor crystal substrate includes a substrate; and a protection layer formed by applying nitride on a surface of the substrate. The protection layer is in an amorphous state in a peripheral area at an outer peripheral part of the substrate, and the protection layer is crystallized in an internal area of the protection layer that is inside the peripheral area of the protection layer.
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