Invention Grant
- Patent Title: Wafer with high rupture resistance
- Patent Title (中): 具有高抗断裂性的晶片
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Application No.: US13623524Application Date: 2012-09-20
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Publication No.: US09379262B2Publication Date: 2016-06-28
- Inventor: Jer-Liang Yeh
- Applicant: Jer-Liang Yeh
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: Foster Pepper PLLC
- Agent Richard A. Koske; P. G. Scott Born
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L31/0368 ; H01L21/02
Abstract:
A wafer with high rupture resistance includes a plurality of surfaces, wherein the surfaces include a largest surface having a largest area than others and a side surface connected to the fringe of the largest surface. The side surface forms a nanostructured layer thereon to assist the stress dispersion of the wafer. Accordingly, the wafer is provided with a high rupture resistance so as to prevent the wafer from damages during semiconductor or other processes.
Public/Granted literature
- US20130069057A1 WAFER WITH HIGH RUPTURE RESISTANCE Public/Granted day:2013-03-21
Information query
IPC分类:
