Invention Grant
- Patent Title: Method for producing vapor deposition mask, and method for producing organic semiconductor element
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Application No.: US14923497Application Date: 2015-10-27
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Publication No.: US09379324B2Publication Date: 2016-06-28
- Inventor: Toshihiko Takeda , Hiroyuki Nishimura , Katsunari Obata
- Applicant: DAI NIPPON PRINTING CO., LTD.
- Applicant Address: JP Shinjuku-Ku
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Shinjuku-Ku
- Agency: Burr & Brown, PLLC
- Priority: JP2012-004486 20120112
- Main IPC: H01L51/00
- IPC: H01L51/00 ; B05B15/04 ; C23C14/04 ; C23C16/04 ; C23F1/02 ; C23F1/12 ; C23F1/14 ; H01L51/56 ; H01L51/50 ; H01L51/52

Abstract:
A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side.
Public/Granted literature
- US20160049586A1 METHOD FOR PRODUCING VAPOR DEPOSITION MASK, AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT Public/Granted day:2016-02-18
Information query
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