Invention Grant
- Patent Title: Nanowire sensor device
- Patent Title (中): 纳米线传感器装置
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Application No.: US12713909Application Date: 2010-02-26
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Publication No.: US09382108B2Publication Date: 2016-07-05
- Inventor: Laurent Duraffourg , Philippe Andreucci , Thomas Ernst , Sebastien Hentz
- Applicant: Laurent Duraffourg , Philippe Andreucci , Thomas Ernst , Sebastien Hentz
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0951251 20090227
- Main IPC: H01L29/76
- IPC: H01L29/76 ; B81B3/00
Abstract:
A device including: a nanowire that includes a first conductive region, and a second region, wherein the second region is an insulator material, the second region does not occupy an entire thickness of the nanowire, and the nanowire is configured so that a current is able to circulate in the nanowire from one end of the nanowire to another end of the nanowire.
Public/Granted literature
- US20100219489A1 NANOWIRE SENSOR DEVICE Public/Granted day:2010-09-02
Information query
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