Invention Grant
- Patent Title: Process for producing highly conducting graphitic films from graphene liquid crystals
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Application No.: US13999912Application Date: 2014-04-03
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Publication No.: US09382117B2Publication Date: 2016-07-05
- Inventor: Aruna Zhamu , Bor Z Jang
- Applicant: Aruna Zhamu , Bor Z Jang
- Applicant Address: US OH Dayton
- Assignee: Nanotek Instruments, Inc.
- Current Assignee: Nanotek Instruments, Inc.
- Current Assignee Address: US OH Dayton
- Main IPC: C01B31/02
- IPC: C01B31/02 ; C01B31/04

Abstract:
A process for producing a highly oriented graphitic film, consisting of (a) preparing a dispersion having graphene oxide (GO) or chemically functionalized graphene (CFG) dispersed in a liquid to form a liquid crystal phase (but not in a GO gel state); (b) depositing the dispersion onto a supporting substrate to form a layer of GO or CFG under an orientation-inducing stress; (c) removing the liquid to form a dried GO or CFG layer having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) thermally reducing the dried layer at a first temperature higher than 100° C. to produce a porous layer of reduced GO or CFG; (e) further heat-treating the porous layer at a second temperature to produce a porous graphitic film having an inter-plane spacing d002 less than 0.4 nm; and (f) compressing the porous graphitic film to produce the highly oriented graphitic film.
Public/Granted literature
- US20150284253A1 Process for producing highly conducting graphitic films from graphene liquid crystals Public/Granted day:2015-10-08
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