Invention Grant
- Patent Title: Oxygen-free atomic layer deposition of indium sulfide
- Patent Title (中): 无氧原子层沉积硫化铟
-
Application No.: US14335745Application Date: 2014-07-18
-
Publication No.: US09382618B2Publication Date: 2016-07-05
- Inventor: Alex B. Martinson , Adam S. Hock , Robert McCarthy , Matthew S. Weimer
- Applicant: UCHICAGO ARGONNE, LLC
- Applicant Address: US IL Chicago
- Assignee: UChicago Argnonne, LLC
- Current Assignee: UChicago Argnonne, LLC
- Current Assignee Address: US IL Chicago
- Agency: Foley & Lardner LLP
- Main IPC: C23C16/30
- IPC: C23C16/30 ; C23C16/455

Abstract:
A method for synthesizing an In(III) N,N′-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately −30° C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N′-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.
Public/Granted literature
- US20160017485A1 OXYGEN-FREE ATOMIC LAYER DEPOSITION OF INDIUM SULFIDE Public/Granted day:2016-01-21
Information query
IPC分类: