Invention Grant
- Patent Title: Ground return for plasma processes
- Patent Title (中): 等离子体工艺的接地回路
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Application No.: US12700484Application Date: 2010-02-04
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Publication No.: US09382621B2Publication Date: 2016-07-05
- Inventor: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
- Applicant: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/509
- IPC: C23C16/509 ; C23C16/458 ; H01J37/32 ; H01L21/67

Abstract:
A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
Public/Granted literature
- US20100196626A1 GROUND RETURN FOR PLASMA PROCESSES Public/Granted day:2010-08-05
Information query
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