Invention Grant
US09382641B2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
有权
用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
- Patent Title: Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
- Patent Title (中): 用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
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Application No.: US12767041Application Date: 2010-04-26
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Publication No.: US09382641B2Publication Date: 2016-07-05
- Inventor: Mikiya Ichimura , Makoto Miyoshi , Mitsuhiro Tanaka
- Applicant: Mikiya Ichimura , Makoto Miyoshi , Mitsuhiro Tanaka
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2009-115582 20090512
- Main IPC: H01L29/20
- IPC: H01L29/20 ; C30B25/02 ; C30B19/00 ; C30B23/02 ; C30B29/40 ; H01L21/02 ; H01L29/778
Abstract:
An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with AlN. A barrier layer is formed on the spacer layer with group III nitride having a composition of InXAlyGazN (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, AlN, and GaN as vertexes.
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