Invention Grant
- Patent Title: Silicon force sensor
- Patent Title (中): 硅力传感器
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Application No.: US14064573Application Date: 2013-10-28
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Publication No.: US09383270B1Publication Date: 2016-07-05
- Inventor: Paul C. Galambos , Thomas B. Crenshaw , Erik E. Nishida , Damon J. Burnett , Jeffrey W. Lantz
- Applicant: Sandia Corporation
- Applicant Address: US NM Albuquerque
- Assignee: Sandia Corporation
- Current Assignee: Sandia Corporation
- Current Assignee Address: US NM Albuquerque
- Agency: Medley, Behrens & Lewis, LLC
- Agent Aman Talwar
- Main IPC: G01L1/22
- IPC: G01L1/22 ; G01L1/18 ; G01L5/00

Abstract:
The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.
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