Invention Grant
US09383641B2 Method of repairing defect and method of manufacturing semiconductor device
有权
修复缺陷的方法及制造半导体器件的方法
- Patent Title: Method of repairing defect and method of manufacturing semiconductor device
- Patent Title (中): 修复缺陷的方法及制造半导体器件的方法
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Application No.: US14192671Application Date: 2014-02-27
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Publication No.: US09383641B2Publication Date: 2016-07-05
- Inventor: Shingo Kanamitsu
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Priority: JP2013-188841 20130911
- Main IPC: H01L21/302
- IPC: H01L21/302 ; G03F7/00 ; H01L21/265 ; H01L21/02 ; B29L31/00
Abstract:
According to one embodiment, in a method of repairing a defect on a template substrate for imprint lithography using a charged particle beam, a drift correction mark to correct drift of the charged particle beam is formed on the template substrate. The defect on the template substrate is repaired while correcting the drift of the charged particle beam with reference to the drift correction mark. The drift correction mark is removed.
Public/Granted literature
- US20150072524A1 METHOD OF REPAIRING DEFECT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-03-12
Information query
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