Invention Grant
US09383657B2 Method and structure for lithography processes with focus monitoring and control
有权
具有焦点监测和控制的光刻过程的方法和结构
- Patent Title: Method and structure for lithography processes with focus monitoring and control
- Patent Title (中): 具有焦点监测和控制的光刻过程的方法和结构
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Application No.: US14194960Application Date: 2014-03-03
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Publication No.: US09383657B2Publication Date: 2016-07-05
- Inventor: Jhih-Yu Wang , Chien-Yu Li , Iu-Ren Chen , Chi-Cheng Hung , Wei-Liang Lin , Chun-Kuang Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20
Abstract:
A method for lithography exposing process is provided. The method includes performing a first lithography exposing process to a resist layer using a mask having a focus-sensitive pattern and an energy-sensitive pattern; measuring critical dimensions (CDs) of transferred focus-sensitive pattern and transferred energy-sensitive pattern on the resist layer; extracting Bossung curves from the CDs; and determining slopes of the Bossung curves.
Public/Granted literature
- US20150248068A1 Method and Structure for Lithography Processes with Focus Monitoring and Control Public/Granted day:2015-09-03
Information query
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