A semiconductor memory device includes a core region for storing data and a peripheral region for controlling the core region. The semiconductor memory device includes a digital noise measurement circuit and an output selection circuit. The digital noise measurement circuit selects a first operation voltage among a plurality of operation voltages based on a voltage selection signal, generates first noise data by digitizing first noise in the first operation voltage based on a plurality of reference voltages, and outputs the first noise data. The plurality of operation voltages are supplied to the core region and the peripheral region. The output selection circuit outputs one of first data and the first noise data based on an output selection signal. The first data is provided from the core region.