Invention Grant
- Patent Title: Monolithic multi-channel adaptable STT-MRAM
- Patent Title (中): 单片多通道适应STT-MRAM
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Application No.: US13571576Application Date: 2012-08-10
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Publication No.: US09384810B2Publication Date: 2016-07-05
- Inventor: Seung H. Kang , Xiaochun Zhu
- Applicant: Seung H. Kang , Xiaochun Zhu
- Applicant Address: US CA San Diego
- Assignee: QULACOMM Incorporated
- Current Assignee: QULACOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Elaine H. Lo
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C29/02
Abstract:
A monolithic multi-channel resistive memory includes at least one first bank associated with a first channel and tuned according to first device attributes and/or first circuit attributes. The memory also includes at least one second bank associated with a second channel and tuned according to second device attributes and/or second circuit attributes.
Public/Granted literature
- US20140043890A1 MONOLITHIC MULTI-CHANNEL ADAPTABLE STT-MRAM Public/Granted day:2014-02-13
Information query
