Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
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Application No.: US14285775Application Date: 2014-05-23
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Publication No.: US09384833B2Publication Date: 2016-07-05
- Inventor: Hong Bae Kim , Jong Hoon Oh , Jeong Hwan Kwon , Sang Kug Lym
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2014-0012132 20140203
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C29/52 ; G11C5/14

Abstract:
The memory system includes at least one volatile memory configured to store data. The memory system also includes a non-volatile memory controller configured to provide a control signal to allow the data to be stored in a non-volatile memory during a power interruption mode. In addition, the memory system includes a termination resistor (TER) configured to control a data path in response to a power interruption signal.
Public/Granted literature
- US20150221370A1 MEMORY SYSTEM Public/Granted day:2015-08-06
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