Invention Grant
US09384834B2 Storage device with 2D configuration of phase change memory integrated circuits
有权
存储器件具有2D配置的相变存储器集成电路
- Patent Title: Storage device with 2D configuration of phase change memory integrated circuits
- Patent Title (中): 存储器件具有2D配置的相变存储器集成电路
-
Application No.: US14643544Application Date: 2015-03-10
-
Publication No.: US09384834B2Publication Date: 2016-07-05
- Inventor: Theodoros A. Antonakopoulos , Evangelos Eleftheriou , Ioannis Koltsidas , Peter Mueller , Aspasia Palli , Roman A. Pletka
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Keivan Razavi
- Priority: GB1404173.5 20140310
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C14/00 ; G11C7/10

Abstract:
A storage device, apparatus, and method to write and/or read data from such storage device. The storage device, comprises a channel controller and phase change memory integrated circuits (PCM ICs) arranged in sub-channels, wherein each of the sub-channels comprises several PCM ICs connected by at least one data bus line, which at least one data bus line connects to the channel controller. The channel controller is configured to write data to and/or read data from the PCM ICs according to a matrix configuration of PCM ICs, wherein: a number of columns of the matrix configuration respectively corresponds to a number of the sub-channels, the sub-channels forming a channel, and a number of rows of the matrix configuration respectively corresponds to a number of sub-banks, the sub-banks forming a bank, wherein each of the sub-banks comprises PCM ICs that belong, each, to distinct sub-channels of the sub-channels.
Public/Granted literature
- US20150255155A1 STORAGE DEVICE WITH 2D CONFIGURATION OF PHASE CHANGE MEMORY INTEGRATED CIRCUITS Public/Granted day:2015-09-10
Information query