Invention Grant
- Patent Title: Content addressable memory
- Patent Title (中): 内容可寻址内存
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Application No.: US14541646Application Date: 2014-11-14
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Publication No.: US09384836B2Publication Date: 2016-07-05
- Inventor: Hung-Yu Lee , Chien-Yuan Pao
- Applicant: REALTEK SEMICONDUCTOR CORP.
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW102141735A 20131115
- Main IPC: G11C15/04
- IPC: G11C15/04

Abstract:
This disclosure provides a content addressable memory which includes: a data memory cell for storing a data bit; a mask memory cell for storing a mask bit; and a comparing and readout unit connected to at least one read word line for receiving at least one read word signal, connected to at least one function bit line for receiving a search bit signal, and connected to the data memory cell and the mask memory cell for receiving the data bit and the mask bit; wherein the data memory cell is connected to a data-use write word line for receiving a data-use write word signal, the mask memory cell is connected to a mask-use write word line for receiving a mask-use write word signal, so as to decide whether a write bit signal can be written into the data bit and the mask bit through a pair of write bit lines.
Public/Granted literature
- US20150138861A1 CONTENT ADDRESSABLE MEMORY Public/Granted day:2015-05-21
Information query