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US09384839B2 Write sequence providing write abort protection 有权
写序列提供写中止保护

Write sequence providing write abort protection
Abstract:
In a multi-level cell (MLC) nonvolatile memory array, data is assigned sequentially to the lower and upper page of a word line, then both lower and upper pages are programmed together before programming a subsequent word line. Word lines of multiple planes are programmed together using latches to hold data until all data is transferred. Tail-ends of data of write commands are stored separately.
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