Invention Grant
- Patent Title: Write sequence providing write abort protection
- Patent Title (中): 写序列提供写中止保护
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Application No.: US13788415Application Date: 2013-03-07
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Publication No.: US09384839B2Publication Date: 2016-07-05
- Inventor: Chris Nga Yee Avila , Gautam Ashok Dusija
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/04 ; G11C11/56 ; G11C16/22

Abstract:
In a multi-level cell (MLC) nonvolatile memory array, data is assigned sequentially to the lower and upper page of a word line, then both lower and upper pages are programmed together before programming a subsequent word line. Word lines of multiple planes are programmed together using latches to hold data until all data is transferred. Tail-ends of data of write commands are stored separately.
Public/Granted literature
- US20140254263A1 Write Sequence Providing Write Abort Protection Public/Granted day:2014-09-11
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