Invention Grant
- Patent Title: Partial erase of nonvolatile memory blocks
- Patent Title (中): 非易失性存储器块的部分擦除
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Application No.: US14546133Application Date: 2014-11-18
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Publication No.: US09384845B2Publication Date: 2016-07-05
- Inventor: Niles Yang , Jianmin Huang
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/16 ; G11C16/34 ; G11C16/14 ; G06F12/02

Abstract:
Erasing blocks of a nonvolatile memory may include two erase steps. A first erase step brings the memory cells of a block to an intermediate state between their programmed states and an erased state. The block is then maintained with the memory cells in the intermediate state for a period of time. Subsequently, a second erase step on the block brings the memory cells from the intermediate state to the erased state.
Public/Granted literature
- US20160141041A1 Partial Erase of Nonvolatile Memory Blocks Public/Granted day:2016-05-19
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