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US09384845B2 Partial erase of nonvolatile memory blocks 有权
非易失性存储器块的部分擦除

Partial erase of nonvolatile memory blocks
Abstract:
Erasing blocks of a nonvolatile memory may include two erase steps. A first erase step brings the memory cells of a block to an intermediate state between their programmed states and an erased state. The block is then maintained with the memory cells in the intermediate state for a period of time. Subsequently, a second erase step on the block brings the memory cells from the intermediate state to the erased state.
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