Invention Grant
- Patent Title: Memories having a built-in self-test (BIST) feature
- Patent Title (中): 具有内置自检（BIST）功能的记忆体
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Application No.: US14102727Application Date: 2013-12-11
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Publication No.: US09384856B2Publication Date: 2016-07-05
- Inventor: Henning F. Spruth , Qadeer A. Qureshi , Reinaldo Silveira
- Applicant: Henning F. Spruth , Qadeer A. Qureshi , Reinaldo Silveira
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/38 ; G06F11/263 ; G11C29/42 ; G11C29/44
Abstract:
A memory system includes a memory and a built-in self-test (BIST) unit coupled to the memory. The BIST unit is configured to run a test pattern on the memory to accumulate a fault signature, and store fault signature information based on the accumulated fault signature at multiple locations in the memory.
Public/Granted literature
- US20150162098A1 MEMORIES HAVING A BUILT-IN SELF-TEST (BIST) FEATURE Public/Granted day:2015-06-11
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