Invention Grant
US09384971B2 Method of manufacturing semiconductor device by forming a film on a substrate
有权
通过在基板上形成膜来制造半导体器件的方法
- Patent Title: Method of manufacturing semiconductor device by forming a film on a substrate
- Patent Title (中): 通过在基板上形成膜来制造半导体器件的方法
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Application No.: US14679156Application Date: 2015-04-06
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Publication No.: US09384971B2Publication Date: 2016-07-05
- Inventor: Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
- Applicant: Hitachi-Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2008-300891 20081126; JP2009-246707 20091027
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; H01L21/314 ; H01L21/318 ; C23C16/46 ; C23C16/52 ; C23C16/50 ; C23C14/54 ; C23C28/00

Abstract:
Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element under a condition where chemical adsorption of a molecule constituting the gas containing the first element is not saturated; forming a second layer including the first layer and a layer including a second element stacked on the first layer by supplying a gas containing the second element under a condition where chemical adsorption of a molecule constituting the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
Public/Granted literature
- US20150214034A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2015-07-30
Information query
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