Invention Grant
US09384971B2 Method of manufacturing semiconductor device by forming a film on a substrate 有权
通过在基板上形成膜来制造半导体器件的方法

Method of manufacturing semiconductor device by forming a film on a substrate
Abstract:
Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element under a condition where chemical adsorption of a molecule constituting the gas containing the first element is not saturated; forming a second layer including the first layer and a layer including a second element stacked on the first layer by supplying a gas containing the second element under a condition where chemical adsorption of a molecule constituting the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
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