Invention Grant
US09384972B2 Method of manufacturing semiconductor device by forming a film on a substrate
有权
通过在基板上形成膜来制造半导体器件的方法
- Patent Title: Method of manufacturing semiconductor device by forming a film on a substrate
- Patent Title (中): 通过在基板上形成膜来制造半导体器件的方法
-
Application No.: US14681318Application Date: 2015-04-08
-
Publication No.: US09384972B2Publication Date: 2016-07-05
- Inventor: Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
- Applicant: Hitachi-Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2008-300891 20081126; JP2009-246707 20091027
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; H01L21/314 ; H01L21/318 ; C23C16/46 ; C23C16/52 ; C23C16/50 ; C23C14/54 ; C23C28/00

Abstract:
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer by supplying a gas containing a second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
Public/Granted literature
- US20150221495A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2015-08-06
Information query
IPC分类: