Invention Grant
- Patent Title: Nanowire devices
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Application No.: US14596399Application Date: 2015-01-14
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Publication No.: US09384975B2Publication Date: 2016-07-05
- Inventor: Bernd W. Gotsmann , Siegfried F. Karg , Heike E. Riel
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Kurt Goudy
- Priority: EP10191466 20101117
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; B82Y10/00 ; H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/786 ; B82Y40/00
Abstract:
A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.
Public/Granted literature
- US20150140793A1 NANOWIRE DEVICES Public/Granted day:2015-05-21
Information query
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