Invention Grant
- Patent Title: Method of forming trenches
- Patent Title (中): 形成沟槽的方法
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Application No.: US14636200Application Date: 2015-03-03
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Publication No.: US09384978B1Publication Date: 2016-07-05
- Inventor: Chao-Hung Lin , Shih-Fang Hong , Li-Wei Feng , Shih-Hung Tsai , Ssu-I Fu , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW104101229A 20150114
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/033 ; H01L21/311
Abstract:
The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel.
Public/Granted literature
- US20160203982A1 METHOD OF FORMING TRENCHES Public/Granted day:2016-07-14
Information query
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