Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US14481008Application Date: 2014-09-09
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Publication No.: US09384980B2Publication Date: 2016-07-05
- Inventor: Yasuhito Yoshimizu , Mitsuhiro Omura , Hisashi Okuchi , Satoshi Wakatsuki , Tsubasa Imamura
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: H01L21/033
- IPC: H01L21/033
Abstract:
According to an embodiment, a manufacturing method of a semiconductor device includes: forming a first film on a processing target by using a first material; forming a second film on the first film by using a second material; selectively removing the second and first films to provide an opening pierced in the second and first films; selectively forming a metal film on an inner surface of the opening in the first film; and processing the processing target by using the metal film as a mask.
Public/Granted literature
- US20160005604A1 Manufacturing Method of Semiconductor Device Public/Granted day:2016-01-07
Information query
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