Plasma etching method and storage medium

Invention Grant

US09384999B2 Plasma etching method and storage medium 有权

Title translation: 等离子体蚀刻方法和存储介质

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Patent Title: Plasma etching method and storage medium
Patent Title (中): 等离子体蚀刻方法和存储介质
Application No.: US12254943

Application Date: 2008-10-21
Publication No.: US09384999B2

Publication Date: 2016-07-05
Inventor: Naotsugu Hoshi , Noriyuki Kobayashi
Applicant: Naotsugu Hoshi , Noriyuki Kobayashi
Applicant Address: JP Tokyo
Assignee: TOKYO ELECTRON LIMITED
Current Assignee: TOKYO ELECTRON LIMITED
Current Assignee Address: JP Tokyo
Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2007-276500 20071024
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/311 ; H01J37/32 ; H01L21/768

Plasma etching method and storage medium

Abstract:

A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CyFz (y and z are predetermined natural numbers) gas and N2 gas, and the flow rate of the N2 gas in the process gas is higher than the flow rate of the CyFz gas.

Abstract(Chinese):

等离子体蚀刻方法，可以防止残留物附着到通孔和沟槽的底部和侧面。由CwFx（x和w是预定的自然数）形成的层间绝缘膜和形成在基板上的金属层或含金属层同时暴露于由处理气体产生的等离子体。处理气体是包括CyFz（y和z是预定的自然数）气体和N 2气体的混合气体，并且处理气体中的N 2气体的流量高于CyFz气体的流量。

Public/Granted literature

US20090111275A1 PLASMA ETCHING METHOD AND STORAGE MEDIUM Public/Granted day:2009-04-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀