Invention Grant
- Patent Title: Semiconductor arrangement comprising metal cap and dielectric layer defining air gap
- Patent Title (中): 半导体装置包括限定气隙的金属盖和电介质层
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Application No.: US14254046Application Date: 2014-04-16
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Publication No.: US09385037B2Publication Date: 2016-07-05
- Inventor: Hsiang-Wei Lin
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/768 ; H01L21/764 ; H01L23/522 ; H01L23/532 ; H01L23/528
Abstract:
One or more semiconductor arrangements are provided. A semiconductor arrangement includes a first dielectric layer defining a first recess, a first contact in the first dielectric layer, a first metal cap over at least part of the first contact and a second dielectric layer over the first dielectric layer within the first recess and defining an air gap proximate the first contact.
Public/Granted literature
- US20150303140A1 SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING THE SAME Public/Granted day:2015-10-22
Information query
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