In one embodiment, a method of forming an electronic device includes providing a wafer having plurality of die separated by spaces. The method includes plasma singulating the wafer through the spaces to form singulation lines that expose side surfaces of the plurality of die. The method includes forming an insulating layer on the exposed side surfaces. In one embodiment, the steps of singulating and forming the insulating layer are carried out with the wafer mounted to a carrier substrate that supports the wafer and singulated die during both steps.