- Patent Title: Semiconductor device with through silicon via and alignment mark
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Application No.: US14676934Application Date: 2015-04-02
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Publication No.: US09385067B2Publication Date: 2016-07-05
- Inventor: Nobuyuki Nakamura
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2011-086330 20110408
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L25/065 ; H01L25/00 ; H01L23/544 ; H01L21/683 ; H01L21/56 ; H01L23/31 ; H01L23/00

Abstract:
A semiconductor device with a semiconductor substrate having a first surface and an opposite-facing second surface, a through electrode electrically connected to the semiconductor element and penetrating the semiconductor substrate from the first surface to the second surface, and a conductor, not electrically connected to the semiconductor element, penetrating the semiconductor substrate from the first surface to the second surface, where the through electrode and the conductor have different shapes in plan view.
Public/Granted literature
- US20150206827A1 SEMICONDUCTOR DEVICE WITH THROUGH SILICON VIA AND ALIGNMENT MARK Public/Granted day:2015-07-23
Information query
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