Invention Grant
US09385069B2 Gate contact structure for FinFET 有权
FinFET的栅极接触结构

Gate contact structure for FinFET
Abstract:
An embodiment includes a substrate, wherein a portion of the substrate extends upwards forming a fin, a gate dielectric over a top surface and at least portions of sidewalls of the fin, a gate electrode over the gate dielectric, and a contact over and extending into the gate electrode, wherein the contact has a first width above the gate electrode and a second width within the gate electrode, the first width being smaller than the second width.
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