Invention Grant
- Patent Title: Gate contact structure for FinFET
- Patent Title (中): FinFET的栅极接触结构
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Application No.: US13789145Application Date: 2013-03-07
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Publication No.: US09385069B2Publication Date: 2016-07-05
- Inventor: Chi-Wen Liu , Chao-Hsiung Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L23/482 ; H01L21/3213 ; H01L21/28 ; H01L21/285 ; H01L21/74 ; H01L21/768 ; H01L21/8234 ; H01L21/8238 ; H01L29/40 ; H01L29/41 ; H01L29/66 ; H01L27/118 ; H01L29/78

Abstract:
An embodiment includes a substrate, wherein a portion of the substrate extends upwards forming a fin, a gate dielectric over a top surface and at least portions of sidewalls of the fin, a gate electrode over the gate dielectric, and a contact over and extending into the gate electrode, wherein the contact has a first width above the gate electrode and a second width within the gate electrode, the first width being smaller than the second width.
Public/Granted literature
- US20140252496A1 Gate Contact Structure for FinFET Public/Granted day:2014-09-11
Information query
IPC分类: