Invention Grant
- Patent Title: Photodiode array
- Patent Title (中): 光电二极管阵列
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Application No.: US14314616Application Date: 2014-06-25
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Publication No.: US09385155B2Publication Date: 2016-07-05
- Inventor: Koei Yamamoto , Terumasa Nagano , Kazuhisa Yamamura , Kenichi Sato , Ryutaro Tsuchiya
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2012-230921 20121018
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L27/146 ; H01L27/144
Abstract:
A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
Public/Granted literature
- US20140306314A1 PHOTODIODE ARRAY Public/Granted day:2014-10-16
Information query
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