A device includes at least one superconducting tunnel junction having a junction region comprising a junction barrier material responsive to electromagnetic fields within the MHz to THz range. The junction may be contained within a bi-SQUID loop having two main junctions and a center junction. The junction barrier material for the main junctions may have different electromagnetic-responsive properties than the junction barrier material for the center junction. The junction barrier material may include type-I multiferroics, type-II multiferroics, a composite multiferroic including layers of magnets and ferroelectrics, or piezoelectric materials. An array of connected bi-SQUID loops may be formed, where the main junctions of each bi-SQUID loop in each row are connected. The electromagnetic-responsive properties of the junction barrier material for center junctions of each bi-SQUID loop may vary by each array column or row. The center/main junctions of each bi-SQUID loop may be connected to an input signal line.