Invention Grant
- Patent Title: Addressable SiOX memory array with incorporated diodes
- Patent Title (中): 可寻址的SiOX存储器阵列，并入二极管
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Application No.: US14240973Application Date: 2012-08-27
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Publication No.: US09385163B2Publication Date: 2016-07-05
- Inventor: James M. Tour , Jun Yao , Jian Lin , Gunuk Wang , Krishna Palem
- Applicant: James M. Tour , Jun Yao , Jian Lin , Gunuk Wang , Krishna Palem
- Applicant Address: US TX Houston SG Singapore
- Assignee: WILLIAM MARSH RICE UNIVERSITY,NANYANG TECHNOLOGICAL UNIVERSITY
- Current Assignee: WILLIAM MARSH RICE UNIVERSITY,NANYANG TECHNOLOGICAL UNIVERSITY
- Current Assignee Address: US TX Houston SG Singapore
- Agency: Winstead PC
- International Application: PCT/US2012/052450 WO 20120827
- International Announcement: WO2013/032983 WO 20130307
- Main IPC: H01L45/02
- IPC: H01L45/02 ; H01L27/24 ; H01L45/00 ; H01L29/66 ; H01L29/861 ; H01L29/872
Abstract:
Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxH, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 and equal to or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.
Public/Granted literature
- US20150162381A1 ADDRESSABLE SIOX MEMORY ARRAY WITH INCORPORATED DIODES Public/Granted day:2015-06-11
Information query
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