Invention Grant
- Patent Title: Semiconductor device having spacer with tapered profile
- Patent Title (中): 具有锥形轮廓的间隔件的半导体器件
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Application No.: US14919738Application Date: 2015-10-22
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Publication No.: US09385206B2Publication Date: 2016-07-05
- Inventor: Chia-Fu Hsu , Chun-Mao Chiou , Shih-Chieh Hsu , Jian-Cun Ke , Chun-Lung Chen , Lung-En Kuo
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW103121078A 20140618
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/49 ; H01L29/51 ; H01L21/28 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device is disclosed. The semiconductor device includes a substrate, a gate structure on the substrate, and a spacer adjacent to the gate structure, in which the bottom of the spacer includes a tapered profile and the tapered profile comprises a convex curve.
Public/Granted literature
- US20160043195A1 SEMICONDUCTOR DEVICE HAVING SPACER WITH TAPERED PROFILE Public/Granted day:2016-02-11
Information query
IPC分类:
