Invention Grant
- Patent Title: Semiconductor device having high-K gate dielectric layer
- Patent Title (中): 具有高K栅极电介质层的半导体器件
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Application No.: US14665612Application Date: 2015-03-23
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Publication No.: US09385208B2Publication Date: 2016-07-05
- Inventor: Kun-Yu Lee , Liang-Gi Yao , Yasutoshi Okuno , Clement Hsingjen Wann
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/51 ; H01L21/28 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes a substrate and a gate structure over the substrate. The gate structure includes a dielectric portion and an electrode portion that is disposed over the dielectric portion. The dielectric portion includes a carbon-doped high dielectric constant (high-k) dielectric layer over the substrate and a carbon-free high-k dielectric layer adjacent to the electrode portion.
Public/Granted literature
- US20150200266A1 SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYER Public/Granted day:2015-07-16
Information query
IPC分类:
