Invention Grant
- Patent Title: Semiconductor device with improved breakdown voltage
- Patent Title (中): 具有提高击穿电压的半导体器件
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Application No.: US14495508Application Date: 2014-09-24
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Publication No.: US09385229B2Publication Date: 2016-07-05
- Inventor: Hongning Yang , Xin Lin , Zhihong Zhang , Jiang-Kai Zuo
- Applicant: Hongning Yang , Xin Lin , Zhihong Zhang , Jiang-Kai Zuo
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first region of semiconductor material having a first conductivity type and a first dopant concentration, a second region of semiconductor material having a second conductivity type overlying the first region, a drift region of semiconductor material having the first conductivity type overlying the second region, and a drain region of semiconductor material having the first conductivity type. The drift region and the drain region are electrically connected, with at least a portion of the drift region residing between the drain region and the second region, and at least a portion of the second region residing between that drift region and the first region. In one or more exemplary embodiments, the first region abuts an underlying insulating layer of dielectric material.
Public/Granted literature
- US20160087096A1 SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS Public/Granted day:2016-03-24
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