Invention Grant
- Patent Title: Wide bandgap semiconductor device
- Patent Title (中): 宽带隙半导体器件
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Application No.: US14617111Application Date: 2015-02-09
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Publication No.: US09385244B2Publication Date: 2016-07-05
- Inventor: Noriyuki Hirakata
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Laura G. Remus
- Priority: JP2014-047806 20140311
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/872 ; H01L29/16 ; H01L29/36 ; H01L29/66 ; H01L29/06
Abstract:
A wide bandgap semiconductor device includes a wide bandgap semiconductor layer and a Schottky electrode. The wide bandgap semiconductor layer includes a first impurity region which is in contact with the Schottky electrode, is in contact with a second main surface, and has a first conductivity type, and a second impurity region which is in contact with the Schottky electrode, is in contact with the first impurity region, and has a second conductivity type. The second impurity region has a first region which is in contact with the Schottky electrode, and a second region which is connected with the first region and provided on a side of the first region closer to the second main surface. A maximum value of a width of the second region is larger than a width of a boundary portion between the first region and the Schottky electrode.
Public/Granted literature
- US20150263180A1 WIDE BANDGAP SEMICONDUCTOR DEVICE Public/Granted day:2015-09-17
Information query
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