Invention Grant
- Patent Title: Gate tunable tunnel diode
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Application No.: US14575311Application Date: 2014-12-18
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Publication No.: US09385245B2Publication Date: 2016-07-05
- Inventor: Ali Afzali-Ardakani , Damon Farmer
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Yuanmin Cai; Andrew M. Calderon
- Main IPC: H01L29/88
- IPC: H01L29/88 ; H01L21/329 ; H01L29/66 ; H01L29/45 ; H01L29/68 ; H01L29/73 ; H01L29/16 ; H01L29/08
Abstract:
A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric.
Public/Granted literature
- US20150102289A1 GATE TUNABLE TUNNEL DIODE Public/Granted day:2015-04-16
Information query
IPC分类:
